Energy bands of n-type at T>0
Energy bands of p-type at T>0
(i) In n-type semiconductors an extra energy level
(called donor energy level) is produced just below the bottom of the conduction band, while in the [ p-type semiconductor, this extra energy band (called acceptor energy level) is just above the top of the valence band.
(ii) In n-type semiconductors, most of the electrons
come from the donor impurity while in p-type semi concluctor, the density of holes in the yalence [ band is predominantlly due to the impurity in the extrinsic semiconductors.
[Any one of the above, or any one, other, correct distinguishing feature.]
At absolute zero temperature conductivities of both type of semiconductors will be zero.'
For equal doping, an n-type semi conductor will have more conductivity than a p-type semiconductor, at room temperature.